050-5906 rev b 6-2015 apt20m18b2vfr a20m18lvfr 200v 100a 0.018 maximum ratings all ratings: t c = 25c unless otherwise speciied. characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 15v, i d = 50a) zero gate voltage drain current (v ds = 200v, v gs = 0v) zero gate voltage drain current (v ds = 160v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current 6 @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms a na volts min typ max 200 0.018 250 1000 100 2 4 apt20m18b2vfr_lvfr 200 100 400 30 40 625 5.00 -55 to 150 300 100 50 3000 g d s power mos v ? is a new generation of high voltage n-channel enhance - ment mode power mosfets. this new technology minimizes the jfet ef - fect, increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. ? t-max? or to-264 package ? avalanche energy rated ? faster switching ? ? lower leakage power mos v ? fredfet fast recovery body diode final data sheet with mos 7 forma caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. microsemi website - http://www.microsemi.com b2vfr lvfr to-264 t-max ? downloaded from: http:///
050-5906 rev b 6-2015 dynamic characteristics apt20m18b2vfr_lvfr single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.250.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 source-drain diode ratings and characteristics thermal characteristics characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -100a) peak diode recovery dv / dt 5 reverse recovery time (i s = -100a, di / dt = 100a/s) reverse recovery charge(i s = -100a, di / dt ?= 100a/s) peak recovery current(i s = -100a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 100 400 1.3 8 t j = 25c 230 t j = 125c 450 t j = 25c 0.9 t j = 125c 3.4 t j = 25c 11 t j = 125c 20 symbol r jc r ja min typ max 0.20 40 unit c/w characteristicjunction to case junction to ambient 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 600h, r g = 25 , peak i l = 100a 5 dv / dt numbers relect the limitations of the test circuit rather than the device itself. i s - i d 100a di / dt 200a/s v r 200v t j 150 c 6 the maximum current is limited by lead temperature. symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 150v i d = 100a @ 25c v gs = 15v v dd = 150v i d = 100a @ 25c r g = 0.6 min typ max 9880 2320 700 330 55 145 18 27 55 6 unit pf nc ns characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time sheet with mos 7 format microsemi reserves the right to change, without notice, the speciications and information contained herein. peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : downloaded from: http:///
050-5906 rev b 6-2015 apt20m18b2vfr_lvfr typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 6.5v 5v 5.5v 6v v gs =15 &10 v 7v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 250200 150 100 50 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 120100 8060 40 20 0 100 8060 40 20 0 2.52.0 1.5 1.0 0.5 0.0 normalized to v gs = 10v @ 50a i d = 50a v gs = 10v 0.03020.0729 0.0955 0.00809f0.0182f 0.264f power (watts) junctiontemp. ( c) rc model case temperature. ( c) downloaded from: http:///
050-5906 rev b 6-2015 apt20m18b2vfr_lvfr typical performance curves v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 200 0 10 20 30 40 50 0 100 200 300 400 500 0.3 0.5 0.7 0.9 1.1 1.3 1.5 400100 5010 51 1612 84 0 10ms 1ms 100s t c =+25c t j =+150c single pulse operation here limited by r ds (on) t j =+150c t j =+25c c rss c iss c oss 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline (b2vfr) to-264 (l) package outline (lvfr) 30,00010,000 1,000 100200 100 10 1 v ds =100v v ds = 40v v ds = 160v i d = 100a downloaded from: http:///
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